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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. A KHB4D0N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N65P O C F E G B Q I DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ 13.08 + 0.3 J K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q FEATURES VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 Qg(typ.)=20nC @VGS = 10V K M L J D N N P H 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) ) RATING SYMBOL KHB4D0N65P KHB4D0N65F VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 106 0.85 150 -55 150 Q UNIT 650 30 4.0 16 260 10.6 4.5 36 0.29 4.0* A 16* E TO-220AB KHB4D0N65F A F V V C O DIM B MILLIMETERS Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 mJ mJ V/ns W W/ D N N K L M J R Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient H 1 2 3 A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 RthJC RthJA 1.18 62.5 3.47 62.5 /W /W * : Drain current limited by maximum junction temperature. TO-220IS (1) D G G S 2007. 3. 26 Revision No : 1 1/7 KHB4D0N65P/F ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) gFS ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=650V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=2.0A VDS=50V, ID=2.0A (Note4) 650 2.0 0.95 2.4 3.8 4.0 10 100 3.0 S V V/ V A nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS Note 5) Essentially independent of operating temperature. 2007. 3. 26 Revision No : 1 2/7 KHB4D0N65P/F ID - VDS 10 1 VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom: 5.5V 0 ID - VGS 10 1 VDS = 50V 250s Pulse Test Drain Current ID (A) 10 Drain Current ID (A) 10 0 150 C 25 C -55 C 10 -1 10 -1 10 0 10 1 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 6 VGS = 0V IDS = 250A RDS(ON) - ID On - Resistance RDS(ON) () 5 4 3 VGS = 20V VGS = 10V 1.1 1.0 2 1 0 0.9 0.8 -100 -50 0 50 100 150 0 2 6 4 8 10 Junction Temperature Tj ( C ) Drain Current ID (A) IS - VSD 10 1 RDS(ON) - Tj 3.0 VGS = 10V ID = 2.0A Reverse Drain Current IS (A) Normalized On Resistance 1.8 2.5 2.0 1.5 1.0 0.5 10 0 150 C 25 C 10 -1 VGS = 0V 250s Pulse Test 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C) 2007. 3. 26 Revision No : 1 3/7 KHB4D0N65P/F C - VDS 12 Qg- VGS Gate - Source Voltage VGS (V) ID = 4.0A VDS = 130V VDS = 325V VDS = 520V 10 3 Ciss 10 8 6 4 2 0 Capacitance (pF) Coss 101 Crss 10-1 10-1 100 101 102 0 5 10 15 20 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Safe Operation Area (KHB4D0N65P) Operation in this area is limited by RDS(ON) Safe Operation Area (KHB4D0N651) Operation in this area is limited by RDS(ON) 100s Drain Current ID (A) 101 Drain Current ID (A) 101 100s 1ms 10ms 100 1ms 10ms 100ms DC 100 Tc= 25 C Tj = 150 C Single nonrepetitive pulse DC 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10-1 100 101 102 103 10-2 0 10 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) ID - Tj 4 Drain Current ID (A) 3 2 1 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2007. 3. 26 Revision No : 1 4/7 KHB4D0N65P/F Rth {KHB4D0N65P1} Transient Thermal Resistance [ C / W] 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 0.02 0.0 1 S le ing Pu lse - Duty Factor, D= t1/t2 - RthJC = 10-3 10-2 10-1 Tj(max) - Tc PD 100 101 10-2 10-5 10-4 Square Wave Pulse Duration (sec) Rth {KHB4D0N65F} Transient Thermal Resistance [ C / W] Duty=0.5 100 0.2 0.1 10-1 0.05 0.02 0.01 le ing Pu lse PDM t1 t2 S - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD 10-3 10-2 10-1 100 101 10-2 10-5 10-4 Square Wave Pulse Duration (sec) 2007. 3. 26 Revision No : 1 5/7 KHB4D0N65P/F - Gate Charge VGS Fast Recovery Diode 10 V ID 0.8 VDSS 1.0 mA ID VDS Qgs VGS Qgd Qg Q - Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.5 VDSS 25 VDS ID(t) VDD 10 V VGS VDS(t) Time tp 2007. 3. 26 Revision No : 1 6/7 KHB4D0N65P/F - Resistive Load Switching VDS RL 0.5 VDSS 25 VGS 10% td(on) VGS ton tr 90% VDS tf td(off) toff 10V - Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) IRM di/dt 0.8 x VDSS driver IS VDS (DUT) Body Diode Reverse Current Body Diode Recovery dv/dt VSD 10V VGS Body Diode Forword Voltage drop VDD 2007. 3. 26 Revision No : 1 7/7 |
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